Applied Materials Partners with Micron to Develop Next-Gen Memory Solutions
Applied Materials (AMAT) announced it is working with Micron Technology (MU) to develop next-generation DRAM, high-bandwidth memory and NAND solutions that increase the energy-efficient performance of AI systems, bringing together advanced R&D capabilities from Applied's EPIC Center in Silicon Valley and Micron's innovation center in Boise, Idaho to strengthen the semiconductor innovation pipeline in the United States. Teams from Applied Materials and Micron are collaborating on the development of next-generation materials, process technologies and architectures for advanced DRAM, HBM, and NAND for AI applications. The partnership also includes development on advanced packaging to enable high-bandwidth, low-power memory solutions for power-intensive AI workloads.
