Transphorm’s SuperGaN at PCIM 2024: Surpassing SiC and e-mode GaN Capabilities in High Power Systems
Written by Emily J. Thompson, Senior Investment Analyst
Updated: May 20 2024
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Source: businesswire
- Transphorm's Showcase at PCIM 2024: Highlighting the ability to outperform wide bandgap technologies in higher power systems, particularly with its SuperGaN platform for electric vehicles, data centers, renewable energy, and industrial applications.
- Production of Transphorm SuperGaN FETs: In various customer products ranging from low 45 W power adapters to high-power 7.5 kW PSUs, showcasing unique advantages like liquid-cooled PSUs and high power density server CRPS.
- Technological Achievements: Recent demonstrations include a short-circuit withstand time of 5 microseconds, a bidirectional four-quadrant switch, and a 1200 V GaN-on-Sapphire device.
- Speaking Engagement at Bodo’s Power Systems Session: Philip Zuk, Senior Vice President of Business Development and Marketing, will discuss GaN Wide Bandgap Design as the Future of Power on June 12.
- Core Platform Features: Transphorm's leading GaN power semiconductor technology is characterized by manufacturability, designability, drivability, and reliability, with a current FIT rate of < 0.05 across various applications.
About the author
Emily J. Thompson
Emily J. Thompson, a Chartered Financial Analyst (CFA) with 12 years in investment research, graduated with honors from the Wharton School. Specializing in industrial and technology stocks, she provides in-depth analysis for Intellectia’s earnings and market brief reports.
