NVTS News & Events

Navitas Semiconductor announced exhibition of a 250kW SST solution at APEC 2026 in San Antonio Texas. The Solid-State Transformer platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency. EPFL design uses single stage, modularized bridge rectifier SST topology for converting 3.3kV-AC to 800V-DC at 250 kW power and delivers enhanced performance and modularity. This is built using Navitas GeneSiC ultra-high voltage 3300V and high voltage 1200V Silicon Carbide Trench-Assisted Planar MOSFETs and modules. The SST demonstrator is developed as part of the Power Electronics Laboratory's project HeatingBits, aiming to deploy and showcase the latest technologies inside the EPFL's actual data center.

Navitas Semiconductor will exhibit its latest innovations for AI data centers, performance computing, energy and grid infrastructure, and industrial electrification at APEC 2026 in San Antonio, Texas from March 22-26. At the event, Navitas will unveil the 10 kW 'GaN-powered' 800 V-to-50 V DC-DC platform that employs advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in power density and also supports + / - 400 VDC standard for AI datacenters. Additionally, Navitas will feature a 12 kW AI data center power supply, which leverages IntelliWeave digital control to achieve unmatched efficiency, power density, and performance, along with an 8.5 kW OCP power supply and 4.5 kW CRPS power supply. For next-generation solid-state transformer applications demanding industry-leading efficiency-exceeding 98% conversion from medium-voltage grids to 800 VDC or 1500 VDC for AI data centers and advanced energy infrastructure-Navitas will showcase its latest SiCPAK power modules. The portfolio features ultra-high-voltage 3300 V and 2300 V solutions, along with 1200 V high-voltage options, delivering breakthrough performance, scalability, and reliability for mission-critical power systems. The newly released gate driver evaluation board for dynamic characterization of UHV SiCPAK power modules will also be on display. Advancing the future of AI-enabled high-performance computing, Navitas will debut ultra-compact 240W and 300W power solutions built on its latest GaNFast IC innovations for superior efficiency and power density. Navitas will also showcase high-efficiency GaN-based motor control solutions ranging from 400W to 1kW for advanced industrial applications.

In a regulatory filing, the company said, "On February 24, 2026, Navitas Semiconductor announced that it had reached a mutual decision with Todd Glickman regarding his departure as Senior Vice President, Chief Financial Officer and Treasurer of the company in order for Mr. Glickman to pursue new opportunities. Mr. Glickman will remain with the company for a period of time to provide support and assistance while the company searches for and transitions to a new Chief Financial Officer and Treasurer."